Datasheet > IRG4CC88KB

IRG4CC88KB

更新时间： 2024-09-26 23:58:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
1页	44K
描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4CC88KB 数据手册

PD-91869

IRG4CC88KB

IRG4CC88KB IGBT Die in Wafer Form

600 V

Size 8.8

Ultra-Fast Speed

Short Circuit Rated

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 10A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C= 1.0mA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

4.5V Max.

600V Min.

3.0V Min., 6.5V Max.

200 µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 11 µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )

99% Al, 1% Si (4 microns)

.5705" x .5705"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5347

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : N/A

Die Outline

3/25/99

中文翻译

下载PDF

与IRG4CC88KB相关器件

型号	品牌	获取价格	描述	数据表
IRG4CC88KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER
IRG4CF50WB	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 900V V(BR)CES \| CHIP
IRG4CH20KB	ETC	获取价格
IRG4CH30KB	ETC	获取价格
IRG4CH30KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6 INCH, WAFER
IRG4CH40KB	ETC	获取价格
IRG4CH40KBPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, 6 INCH, WAFER
IRG4CH40SB	INFINEON	获取价格	IGBT Die in Wafer Form
IRG4CH40UB	ETC	获取价格
IRG4CH40UBPBF	INFINEON	获取价格	暂无描述