5秒后页面跳转
IRG4CC71KB PDF预览

IRG4CC71KB

更新时间: 2024-11-01 23:13:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率控制双极性晶体管
页数 文件大小 规格书
2页 80K
描述
IRG4CC71KB IGBT Die in Wafer Form

IRG4CC71KB 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:6 INCH, WAFERReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
其他特性:ULTRA FAST SPEED集电极-发射极最大电压:600 V
配置:SINGLEJESD-30 代码:O-XUUC-N
元件数量:1封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICONBase Number Matches:1

IRG4CC71KB 数据手册

 浏览型号IRG4CC71KB的Datasheet PDF文件第2页 
PD- 91834A  
IRG4CC71KB  
IRG4CC71KB IGBT Die in Wafer Form  
C
600 V  
Size 7.1  
Ultra-Fast Speed  
Circuit Rated Rated  
6" Wafer  
G
E
Electrical Characteristics ( Wafer Form )  
Parameter  
VCE (on)  
V(BR)CES  
VGE(th)  
ICES  
Description  
Guaranteed (Min/Max)  
Test Conditions  
IC = 10A, TJ = 25°C, VGE = 15V  
TJ = 25°C, ICES = 250µA, VGE = 0V  
VGE = VCE , TJ =25°C, IC =250µA  
TJ = 25°C, VCE = 600V  
Collector-to-Emitter Saturation Voltage  
Colletor-to-Emitter Breakdown Voltage  
Gate Threshold Voltage  
1.7V Max.  
600V Min.  
3.0V Min., 6.5V Max.  
300 µA Max.  
Zero Gate Voltage Collector Current  
Gate-to-Emitter Leakage Current  
IGES  
± 1.1 µA Max.  
TJ = 25°C, VGE = +/- 20V  
Mechanical Data  
Nominal Backmetal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-NiV-Ag ( 1kA-2kA-.2.5kA )  
99% Al, 1% Si (4 microns)  
0.305" x 0.390"  
Wafer Diameter:  
150mm, with std. < 100 > flat  
.015" + / -.003"  
Wafer thickness:  
Relevant Die Mechanical Dwg. Number01-5271  
Minimum Street Width  
100 Microns  
Reject Ink Dot Size  
0.25mm Diameter Minimum  
Ink Dot Location  
Consistent throughout same wafer lot  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300C  
Recommended Storage Environment:  
Recommended Die Attach Conditions  
Reference Standard IR packaged part ( for design ) : IRG4PSC71K  
Die Outline  
www.irf.com  
11/28/05  

与IRG4CC71KB相关器件

型号 品牌 获取价格 描述 数据表
IRG4CC72KB ETC

获取价格

IRG4CC77KB ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | CHIP
IRG4CC77KBPBF INFINEON

获取价格

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER
IRG4CC81KB ETC

获取价格

IRG4CC81UB ETC

获取价格

IRG4CC88KB ETC

获取价格

IRG4CC88KBPBF INFINEON

获取价格

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER
IRG4CF50WB ETC

获取价格

TRANSISTOR | IGBT | N-CHAN | 900V V(BR)CES | CHIP
IRG4CH20KB ETC

获取价格

IRG4CH30KB ETC

获取价格