Datasheet > 晶体管 > IGBT> IRG4BC10SPBF

IRG4BC10SPBF

更新时间： 2024-09-15 03:44:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	267K
描述
INSULATED GATE BIPOLAR TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4BC10SPBF 数据手册

PD - 94919A

IRG4BC10SPbF

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Extremely low voltage drop; 1.1V typical at 2A

• S-Speed: Minimizes power dissipation at up to 3

KHz PWM frequency in inverter drives, up to 4

KHz in brushless DC drives, up to 2KHz in

V_CES= 600V

V_{CE(on) typ.}= 1.10V

Chopper Applications

• Very Tight Vce(on) distribution

• Industry standard TO-220AB package

• Lead-Free

@V_GE= 15V, I_C= 2.0A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency

available

• IGBTs optimized for specified application conditions

• Lower conduction losses than many Power

MOSFET''s

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.0

I_CM

I_LM

± 20

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

110

P_DT_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

3.3

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.5

°C/W

2.0(0.07)

g (oz)

www.irf.com

07/04/07

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRG4BC10SPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC10UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC10UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISROT WITH ULTRAFAST SOFR RECOVERY DIODE UltraFast CoPack IGBT
IRG4BC15MD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15MDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC15UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15UD-L	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15UD-LPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
IRG4BC15UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC15UD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15UD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD