Datasheet > 晶体管 > IGBT> IRG4BC20KDS

IRG4BC20KDS

更新时间： 2024-11-05 22:07:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	223K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

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中文翻译

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数据手册

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IRG4BC20KDS 数据手册

PD -91598A

IRG4BC20KD-S

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Short Circuit Rated UltraFast: Optimized for

high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, V_GE= 15V

• Generation 4 IGBT design provides tighter

V_CES= 600V

_{CE(on) typ.}= 2.27V

parameter distribution and higher efficiency than

previous generation

@V_GE= 15V, I_C= 9.0A

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

n-channel

• Industry standard D²Pak package

Benefits

• Latest generation 4 IGBTs offer highest power

density motor controls possible.

•HEXFRED^TMdiodes optimized for performance

with IGBTs. Minimized recovery characteristics

reduce noise, EMI and switching losses.

•This part replaces the IRGBC20KD2-S and

IRGBC20MD2-S products.

D ²Pak

• For hints see design tip 97003.

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

9.0

I_CM

I_LM

I_F@ T_C= 100°C

7.0

I_FM

t_sc

± 20

µs

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Typ.

–––

Max.

2.1

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - Diode

2.5

Case-to-Sink, Flat, Greased Surface

0.5

–––

1.44

–––

°C/W

Junction-to-Ambient ( PCB Mounted,steady-state)ꢀ

Weight

–––

www.irf.com

4/24/2000

12 3 4 5 6 7...10

中文翻译

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与IRG4BC20KDS相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC20KD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20KD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE
IRG4BC20KD-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC20KD-STRLPBF	INFINEON	获取价格	暂无描述
IRG4BC20KD-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC20KD-STRRPBF	INFINEON	获取价格	暂无描述
IRG4BC20KPBF	INFINEON	获取价格	暂无描述
IRG4BC20KS	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
IRG4BC20K-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
IRG4BC20K-SPBF	INFINEON	获取价格	Short Circuit Rated UltraFast IGBT

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