Datasheet > 晶体管 > IGBT> IRG4BC20MDS

IRG4BC20MDS

更新时间： 2024-11-08 22:33:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
11页	203K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)

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中文翻译

获取价格

数据手册

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IRG4BC20MDS 数据手册

PD -94116

IRG4BC20MD-S

Short Circuit Rated

Fast IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Rugged: 10µsec short circuit capable at V_GS=15V

V_CES= 600V

• Low V_CE(on)for 4 to 10kHz applications

• IGBT Co-packaged with ultra-soft-recovery

antiparallel diode

V_{CE(on) typ.}= 1.85V

@V_GE= 15V, I_C= 11A

• Industry standard D²Pak package

Benefits

• Offers highest efficiency and short circuit

n-channel

capability for intermediate applications

• Provides best efficiency for the mid range frequency

(4 to 10kHz)

• Optimized for Appliance Motor Drives, Industrial (Short

Circuit Proof) Drives and Intermediate Frequency

Range Drives

• High noise immune "Positive Only" gate drive-

Negative bias gate drive not necessary

• For Low EMI designs- requires little or no snubbing

• Single Package switch for bridge circuit applications

• Compatible with high voltage Gate Driver IC's

• Allows simpler gate drive

D²Pak

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Short Circuit Withstand Time

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_C@ T_C= 100°C

I_CM

I_LM

I_F@ T_C= 100°C

7.0

t_sc

µs

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

------

-----

Typ.

------

0.50

Max.

2.1

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

2.5

°C/W

------

-----

------

2 (0.07)

------

g (oz)

www.irf.com

3/6/01

12 3 4 5 6 7...11

中文翻译

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与IRG4BC20MDS相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC20MD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20MDS_07	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20MD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20MD-STRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC20MD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20MD-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC20MD-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
IRG4BC20SD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20SDPBF	INFINEON	获取价格	暂无描述

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