Datasheet > 晶体管 > IGBT> IRG4BC20UDS

IRG4BC20UDS

更新时间： 2024-11-17 22:08:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
11页	236K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)

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IRG4BC20UDS 数据手册

PD- 94077

IRG4BC20UD-S

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for high operating frequencies

8-40 kHz in hard switching, >200kHz in resonant

mode

• Generation 4 IGBT design provides tighter para-

meter distribution and higher efficiency than

V_CES= 600V

V_{CE(on) typ.}= 1.85V

@V_GE= 15V, I_C= 6.5A

Generation 3

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

N-channel

bridge configurations

• Industry standard D²Pak package

Benefits

• Generation 4 IGBTs offers highest efficiencies

available

• Optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for

equivalent industry-standard Generation 3 IR IGBTs

D²Pak

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

6.5

I_CM

I_LM

I_F@ T_C= 100°C

7.0

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

0.5

Max.

2.1

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

–––

°C/W

–––

1.44

–––

g (oz)

www.irf.com

1/12/01

12 3 4 5 6 7...11

中文翻译

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与IRG4BC20UDS相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC20UD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20UD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20UD-SPBFTRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6.5A I(C), 600V V(BR)CES, N-Channel,
IRG4BC20UD-SPBFTRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 6.5A I(C), 600V V(BR)CES, N-Channel
IRG4BC20UDSRP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20UD-STRL	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 6.5A I(C) \| TO-263AB
IRG4BC20UD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20UD-STRR	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 6.5A I(C) \| TO-263AB
IRG4BC20UDSTRRP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20UD-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,

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