Datasheet > 晶体管 > IGBT> IRG4BC20K-SPBF

IRG4BC20K-SPBF

更新时间： 2024-09-16 04:10:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
9页	298K
描述
Short Circuit Rated UltraFast IGBT

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中文翻译

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数据手册

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IRG4BC20K-SPBF 数据手册

95167

IRG4BC20K-SPbF

Short Circuit Rated

UltraFast IGBT

Features

High short circuit rating optimized for motor control,

_sc=10µs, @360V V_CE(start), T_J= 125°C,

V_CES= 600V

V_GE= 15V

Combines low conduction losses with high

switching speed

Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

_{CE(on) typ.}=2.27V

@V_GE= 15V, I_C= 9.0A

Lead-Free

Benefits

n-channel

As a Freewheeling Diode we recommend our

HEXFRED^TMultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

Latest generation 4 IGBTs offer highest power

density motor controls possible

This part replaces the IRGBC20K-S and

IRGBC20M-S devices

D²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

9.0

I_CM

I_LM

t_sc

µs

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbfin (1.1Nm)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

0.5

Max.

2.1

Units

°C/W

R_qJC

R_qCS

R_qJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient ( PCB Mounted,steady-state)

1.44

Weight

www.irf.com

04/22/04

12 3 4 5 6 7...9

中文翻译

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