Datasheet > 晶体管 > IGBT> IRG4BC20FD-SPBF

IRG4BC20FD-SPBF

更新时间： 2024-11-06 02:51:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管双极性晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
12页	295K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4BC20FD-SPBF 数据手册

PD -95965

IRG4BC20FD-SPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

Fast CoPack IGBT

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES= 600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

V_{CE(on) typ.}= 1.66V

@V_GE= 15V, I_C= 9.0A

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

n-channel

• Industry standard D²Pak package

• Lead-Free

Benefits

• Generation 4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

D²Pak

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 100°C

9.0

I_CM

I_LM

I_F@ T_C= 100°C

8.0

I_FM

± 20

V_GE

_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

°C

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Junction-to-Case - Diode

Typ.

–––

Max.

2.1

Units

°C/W

R_θJC

R_θJA

–––

3.5

Junction-to-Ambient ( PCB Mounted,steady-state)*

–––

Weight

1.44

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.

www.irf.com

11/19/04

12 3 4 5 6 7...12

中文翻译

下载PDF

与IRG4BC20FD-SPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC20FD-STRL	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20FDSTRLP	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRG4BC20FD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20FD-STRR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3
IRG4BC20FDSTRRP	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IRG4BC20FD-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20FPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20FPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
IRG4BC20KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ

与IRG4BC20FD-SPBF相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG4BC20FD-SPBF

IRG4BC20FD-SPBF 数据手册

与IRG4BC20FD-SPBF相关器件

与IRG4BC20FD-SPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG4BC20FD-SPBF

IRG4BC20FD-SPBF 数据手册

与IRG4BC20FD-SPBF相关器件

与IRG4BC20FD-SPBF相关文章

您还可以找

您在本页遇到什么问题？