Datasheet > 晶体管 > IGBT> IRG4BC20K

IRG4BC20K

更新时间： 2024-11-05 22:33:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制瞄准线双极性晶体管栅局域网
页数	文件大小	规格书
8页	139K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

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IRG4BC20K 数据手册

PD - 91600A

IRG4BC20K

Short Circuit Rated

INSULATED GATE BIPOLAR TRANSISTOR

UltraFast IGBT

Features

• High short circuit rating optimized for motor control,

V_CES= 600V

_sc=10µs, @360V V_CE(start), T_J= 125°C,

_GE= 15V

• Combines low conduction losses with high

switching speed

_{CE(on) typ.}= 2.27V

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

@V_GE= 15V, I_C= 9.0A

n-channel

Benefits

• As a Freewheeling Diode we recommend our

HEXFRED^TMultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBTs offer highest power

density motor controls possible

• This part replaces the IRGBC20K and IRGBC20M

devices

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

9.0

I_CM

I_LM

t_sc

µs

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.1

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.5

–––

2.0 (0.07)

–––

www.irf.com

4/24/2000

12 3 4 5 6 7 8

中文翻译

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