Datasheet > IRG4BC20FD-STRR

IRG4BC20FD-STRR

更新时间： 2024-11-09 21:10:59

品牌	Logo	应用领域
英飞凌 - INFINEON		栅功率控制晶体管
页数	文件大小	规格书
10页	219K
描述
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4BC20FD-STRR 数据手册

PD -91783A

IRG4BC20FD-S

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES= 600V

V_{CE(on) typ.}= 1.66V

@V_GE= 15V, I_C= 9.0A

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use

in bridge configurations

• Industry standard D²Pak package

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiencies

available

• IGBTs optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBTs . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings

D ²Pak

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 100°C

9.0

I_CM

I_LM

I_F@ T_C= 100°C

8.0

I_FM

± 20

V_GE

_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

°C

Thermal Resistance

Parameter

Typ.

–––

Max.

2.1

Units

°C/W

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient ( PCB Mounted,steady-state)*

Weight

–––

3.5

–––

1.44

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques

refer to application note #AN-994.

www.irf.com

4/24/2000

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRG4BC20FD-STRR相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC20FDSTRRP	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IRG4BC20FD-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20FPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20FPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4BC20K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
IRG4BC20KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC20KDS	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20KD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC20KD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE

与IRG4BC20FD-STRR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG4BC20FD-STRR

IRG4BC20FD-STRR 数据手册

与IRG4BC20FD-STRR相关器件

与IRG4BC20FD-STRR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRG4BC20FD-STRR

IRG4BC20FD-STRR 数据手册

与IRG4BC20FD-STRR相关器件

与IRG4BC20FD-STRR相关文章

您还可以找

您在本页遇到什么问题？