IRG4BC15MDPBF

更新时间： 2024-11-06 03:44:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	261K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册

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IRG4BC15MDPBF 数据手册

PD- 95612

IRG4BC15MDPbF

Short Circuit Rated

Fast IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST

SOFT RECOVERY DIODE

Features

• Rugged: 10µsec short circuit capable at VGS = 15V

• Low VCE(on) for 4 to 10kHz applications

• IGBT co-packaged with ultra-soft-recovery anti-parallel

diodes

• Industry standard TO-220AB package

• Lead-Free

V_CES= 600V

_{CE(on) typ.}= 1.88V

Benefits

@V_GE= 15V, I_C= 8.6A

• Best Value for Appliance and Industrial applications

• Offers highest efficiency and short circuit capability for

intermediate applications

n-channel

• Provides best efficiency for the mid range frequency

(4 to 10kHz)

• Optimized for Appliance and Industrial applications up to

1HP

• High noise immune "Positive Only" gate drive - Negative

bias gate drive not necessary

• For Low EMI designs - requires little or no snubbing

• Single Package switch for bridge circuit applications

• Compatible with high voltage Gate Drive IC's

• Allows simpler gate drive

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Short Circuit Withstand Time

Diode Maximum Forward Current

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

8.6

I_CM

I_LM

I_F@ T_C= 100°C

4.0

t_sc

µs

I_FM

V_GE

± 20

_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

2.7

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

–––

7.0

°C/W

0.50

–––

2 (0.07)

–––

g (oz)

www.irf.com

8/2/04

12 3 4 5 6 7...10

中文翻译

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与IRG4BC15MDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4BC15UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15UD-L	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15UD-LPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
IRG4BC15UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC15UD-S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4BC15UD-SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
IRG4BC15UD-STRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC15UD-STRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRG4BC20F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
IRG4BC20FD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ

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