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IRG4BC15UD-STRLPBF PDF预览

IRG4BC15UD-STRLPBF

更新时间： 2024-09-16 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
10页 257K
描述
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

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IRG4BC15UD-STRLPBF 数据手册

 浏览型号IRG4BC15UD-STRLPBF的Datasheet PDF文件第2页浏览型号IRG4BC15UD-STRLPBF的Datasheet PDF文件第3页浏览型号IRG4BC15UD-STRLPBF的Datasheet PDF文件第4页浏览型号IRG4BC15UD-STRLPBF的Datasheet PDF文件第5页浏览型号IRG4BC15UD-STRLPBF的Datasheet PDF文件第6页浏览型号IRG4BC15UD-STRLPBF的Datasheet PDF文件第7页 
PD- 94151A  
IRG4BC15MD  
Short Circuit Rated  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Fast IGBT  
C
Features  
• Rugged: 10µsec short circuit capable at VGS = 15V  
VCES = 600V  
• Low VCE(on) for 4 to 10kHz applications  
• IGBT co-packaged with ultra-soft-recovery anti-parallel  
diodes  
VCE(on) typ. = 1.88V  
G
• Industry standard TO-220AB package  
Benefits  
@VGE = 15V, IC = 8.6A  
E
• Best Value for Appliance and Industrial applications  
• Offers highest efficiency and short circuit capability for  
n-channel  
intermediate applications  
• Provides best efficiency for the mid range frequency  
(4 to 10kHz)  
• Optimized for Appliance and Industrial applications up to  
1HP  
• High noise immune "Positive Only" gate drive - Negative  
bias gate drive not necessary  
• For Low EMI designs - requires little or no snubbing  
• Single Package switch for bridge circuit applications  
• Compatible with high voltage Gate Drive IC's  
• Allows simpler gate drive  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Short Circuit Withstand Time  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
14  
IC @ TC = 100°C  
8.6  
ICM  
28  
A
ILM  
28  
IF @ TC = 100°C  
4.0  
tsc  
12  
µs  
A
IFM  
VGE  
16  
± 20  
V
P
D @ TC = 25°C  
Maximum Power Dissipation  
49  
W
PD @ TC = 100°C Maximum Power Dissipation  
19  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1 N•m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
2.7  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
–––  
7.0  
°C/W  
0.50  
–––  
80  
–––  
2 (0.07)  
–––  
g (oz)  
www.irf.com  
1
5/25/01  
1234567...10

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IRG4BC20FD-STRLPBF INFINEON

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