5秒后页面跳转
IRFZ34EPBF PDF预览

IRFZ34EPBF

更新时间: 2024-11-06 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 1902K
描述
HEXFET㈢ Power MOSFET

IRFZ34EPBF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:NBase Number Matches:1

IRFZ34EPBF 数据手册

 浏览型号IRFZ34EPBF的Datasheet PDF文件第2页浏览型号IRFZ34EPBF的Datasheet PDF文件第3页浏览型号IRFZ34EPBF的Datasheet PDF文件第4页浏览型号IRFZ34EPBF的Datasheet PDF文件第5页浏览型号IRFZ34EPBF的Datasheet PDF文件第6页浏览型号IRFZ34EPBF的Datasheet PDF文件第7页 
PD - 94789  
IRFZ34EPbF  
l
l
l
l
l
l
l
Advanced Process Technology  
UltraLowOn-Resistance  
Dynamic dv/dt Rating  
175°COperatingTemperature  
Fast Switching  
HEXFET® Power MOSFET  
D
VDSS = 60V  
Ease of Paralleling  
Lead-Free  
RDS(on) = 0.042Ω  
G
Description  
ID = 28A  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETPowerMOSFETs  
are well known for, provides the designer with an  
extremely efficient device for use in a wide variety of  
applications.  
S
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 watts. The low thermal  
resistanceandlowpackagecostoftheTO-220contribute  
to its wide acceptance throughout the industry.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
28  
Units  
A
I
I
I
@ T = 25°C  
C
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
D
@ T = 100°C  
C
20  
112  
68  
DM  
P
@T = 25°C  
Power Dissipation  
C
W
D
Linear Derating Factor  
0.46  
± 20  
W/°C  
V
V
Gate-to-Source Voltage  
GS  
EAS  
IAR  
97  
17  
mJ  
A
Single Pulse Avalanche Energy  
Avalanche Current  
EAR  
6.8  
mJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Operating Junction and  
dv/dt  
5.0  
V/ns  
T
-55 to + 175  
J
T
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
STG  
300 (1.6mm from case )  
10 lbf in (1.1N m)  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
2.2  
Units  
RθJC  
RθCS  
RθJA  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
0.50  
–––  
–––  
62  
°C/W  
www.irf.com  
1
10/31/03  

IRFZ34EPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ44EPBF INFINEON

类似代替

HEXFET㈢ Power MOSFET
IRF1018EPBF INFINEON

类似代替

HEXFET Power MOSFET
STP36NF06L STMICROELECTRONICS

功能相似

N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET

与IRFZ34EPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFZ34F INFINEON

获取价格

Power Field-Effect Transistor, 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFZ34FX INFINEON

获取价格

Power Field-Effect Transistor, 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFZ34L INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34L VISHAY

获取价格

Power MOSFET
IRFZ34LPBF VISHAY

获取价格

Power MOSFET
IRFZ34N INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRFZ34NL INFINEON

获取价格

HEXFET? Power MOSFET
IRFZ34NLPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34NPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34NS INFINEON

获取价格

HEXFET Power MOSFET