IRFZ34S

更新时间： 2024-11-21 11:09:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	282K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFZ34S 数据手册

PD - 9.892A

IRFZ34S/L

HEXFET^®Power MOSFET

l Advanced Process Technology

l Surface Mount (IRFZ34S)

l Low-profile through-hole (IRFZ34L)

l 175°C Operating Temperature

l Fast Switching

V_DSS= 60V

R_DS(on)= 0.050Ω

I_D= 30A

Description

Third Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedizeddevicedesignthatHEXFETPowerMOSFETs

arewellknownfor,providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ34L) is available for low-

profile applications.

Pa k

T O -2 6 2

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

120

3.7

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.59

± 20

200

4.5

W/°C

V_GS

E_AS

dv/dt

T_J

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

V/ns

-55 to + 175

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

–––

Max.

1.7

Units

R_θJC

R_θJA

°C/W

–––

8/25/97

12 3 4 5 6 7...10

中文翻译

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