IRFZ34VL

更新时间： 2024-09-13 21:55:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	129K
描述
Advanced Process Technology

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中文翻译

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数据手册

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IRFZ34VL 数据手册

PD - 94180

IRFZ34VS

IRFZ34VL

^lAdvanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

HEXFET^®Power MOSFET

V_DSS= 60V

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Optimized for SMPS Applications

R_DS(on)= 28mΩ

Description

I_D= 30A

Advanced HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D²Pak is suitable for

highcurrentapplicationsbecauseofitslowinternalconnection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

IRFZ34VS

TO-262

IRFZ34VL

The through-hole version (IRFZ34VL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

120

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.46

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

7.0

V/ns

4.5

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.15

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mounted)**

–––

°C/W

www.irf.com

02/14/02

12 3 4 5 6 7...10

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