IRFZ34VSPBF

更新时间： 2024-11-01 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	215K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFZ34VSPBF 数据手册

PD - 95560

IRFZ34VSPbF

^lAdvanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

IRFZ34VLPbF

HEXFET^®Power MOSFET

V_DSS= 60V

l Fully Avalanche Rated

l Optimized for SMPS Applications

R_DS(on)= 28mΩ

l Lead-Free

I_D= 30A

Description

Advanced HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D²Pak is suitable for

highcurrentapplicationsbecauseofitslowinternalconnection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

IRFZ34VS

TO-262

IRFZ34VL

The through-hole version (IRFZ34VL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

120

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.46

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

7.0

V/ns

4.5

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.15

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mounted)**

–––

°C/W

www.irf.com

07/15/04

12 3 4 5 6 7...10

中文翻译

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与IRFZ34VSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ34VSTRLPBF	INFINEON	获取价格	暂无描述
IRFZ35	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 25A I(D) \| TO-220AB
IRFZ35-001	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-002	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-003	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-004	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-005	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta

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