IRFZ34VSPBF

更新时间： 2024-11-20 22:24:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
10页	215K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFZ34VSPBF 数据手册

PD - 95560

IRFZ34VSPbF

^lAdvanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

IRFZ34VLPbF

HEXFET^®Power MOSFET

V_DSS= 60V

l Fully Avalanche Rated

l Optimized for SMPS Applications

R_DS(on)= 28mΩ

l Lead-Free

I_D= 30A

Description

Advanced HEXFET^®Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in any

existing surface mount package. The D²Pak is suitable for

highcurrentapplicationsbecauseofitslowinternalconnection

resistance and can dissipate up to 2.0W in a typical surface

mount application.

D²Pak

IRFZ34VS

TO-262

IRFZ34VL

The through-hole version (IRFZ34VL) is available for low-

profile application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

120

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.46

V_GS

I_AR

Gate-to-Source Voltage

± 20

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

7.0

V/ns

4.5

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.15

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB Mounted)**

–––

°C/W

www.irf.com

07/15/04

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRFZ34VSPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ34VSTRLPBF	INFINEON	获取价格	暂无描述
IRFZ35	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 25A I(D) \| TO-220AB
IRFZ35-001	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-002	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-003	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-004	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-005	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ35-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Meta

与IRFZ34VSPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

27
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

19
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

47

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ34VSPBF

IRFZ34VSPBF 数据手册

与IRFZ34VSPBF相关器件

与IRFZ34VSPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFZ34VSPBF

IRFZ34VSPBF 数据手册

与IRFZ34VSPBF相关器件

与IRFZ34VSPBF相关文章

您还可以找

您在本页遇到什么问题？