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IRFZ40 PDF预览

IRFZ40

更新时间: 2024-11-21 11:57:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 1480K
描述
Power MOSFET

IRFZ40 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.11
雪崩能效等级(Eas):100 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):50 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFZ40 数据手册

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IRFZ40, SiHFZ40  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
• 175 °C Operating Temperature  
• Fast Switching  
R
DS(on) ()  
VGS = 10 V  
0.028  
Qg (Max.) (nC)  
67  
18  
• Ease of Paralleling  
Q
Q
gs (nC)  
gd (nC)  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
25  
Configuration  
Single  
D
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
TO-220AB  
G
The TO-220AB package is universially preferred for  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220AB contribute to its  
wide acceptance throughout the industry.  
S
S
N-Channel MOSFET  
D
G
ORDERING INFORMATION  
Package  
TO-220AB  
IRFZ40PbF  
SiHFZ40-E3  
IRFZ40  
Lead (Pb)-free  
SnPb  
SiHFZ40  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Currente  
VDS  
V
VGS  
20  
TC = 25 °C  
TC = 100 °C  
50  
VGS at 10 V  
ID  
Continuous Drain Current  
36  
200  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
1.0  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
EAS  
PD  
100  
TC = 25 °C  
150  
W
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d  
- 55 to + 175  
300  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 , IAS = 51 A (see fig. 12).  
c. ISD 51 A, dI/dt 250 A/μs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
e. Current limited by the package, (die current = 51 A).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91385  
S11-0520-Rev. B, 21-Mar-11  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

IRFZ40 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ40PBF VISHAY

完全替代

Power MOSFET
SIHFZ40-E3 VISHAY

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Power MOSFET

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