Datasheet > IRFZ40

IRFZ40

更新时间： 2024-11-04 22:24:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
9页	184K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFZ40 数据手册

IRFZ40

IRFZ40FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

TYPE

IRFZ40

IRFZ40FI

V_DSS

R_DS(on)

I_D

50 V

< 0.028 Ω

50 A

27 A

■

TYPICAL R_DS(on)= 0.022 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

TO-220

ISOWATT220

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

IRFZ40

IRFZ40FI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (cont.) at T_c= 25 ^oC

Drain Current (cont.) at T_c= 100 ^oC

Drain Current (pulsed)

± 20

I_D

_DM(•)

200

150

200

P_tot

Total Dissipation at T_c= 25 ^oC

W/^oC

Derating Factor

0.3

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 175

175

^oC

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/9

July 1993

12 3 4 5 6 7...9

中文翻译

下载PDF

IRFZ40 替代型号

型号	品牌	替代类型	描述	数据表
IRFZ40PBF	VISHAY	功能相似	Power MOSFET

与IRFZ40相关器件

型号	品牌	获取价格	描述	数据表
IRFZ40-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-002	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-004	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-004PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-005	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-006	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-006PBF	INFINEON	获取价格	50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET
IRFZ40-009	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met
IRFZ40-009PBF	INFINEON	获取价格	Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Met