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IRFZ40 PDF预览

IRFZ40

更新时间: 2024-11-01 22:24:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
9页 184K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRFZ40 数据手册

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IRFZ40  
IRFZ40FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
TYPE  
IRFZ40  
IRFZ40FI  
VDSS  
RDS(on)  
ID  
50 V  
50 V  
< 0.028 Ω  
< 0.028 Ω  
50 A  
27 A  
TYPICAL RDS(on) = 0.022 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
3
3
2
2
1
1
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
TO-220  
ISOWATT220  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
IRFZ40  
50  
IRFZ40FI  
VDS  
VDG R  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (cont.) at Tc = 25 oC  
Drain Current (cont.) at Tc = 100 oC  
Drain Current (pulsed)  
50  
50  
V
V
50  
± 20  
V
50  
35  
27  
19  
A
ID  
A
I
DM()  
200  
150  
1
200  
45  
A
Ptot  
Total Dissipation at Tc = 25 oC  
W
W/oC  
Derating Factor  
0.3  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
V
-65 to 175  
175  
oC  
oC  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/9  
July 1993  

IRFZ40 替代型号

型号 品牌 替代类型 描述 数据表
IRFZ40PBF VISHAY

功能相似

Power MOSFET

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IRFZ40-009 INFINEON

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