Datasheet > IRFZ34S_11

IRFZ34S_11

更新时间： 2024-11-21 11:09:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	355K
描述
Power MOSFET

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数据手册

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IRFZ34S_11 数据手册

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Advanced Process Technology

• Surface Mount

R_DS(on)()

V_GS= 10 V

0.050

Q_g(Max.) (nC)

• Low-Profile Through-Hole (IRFZ34L, SiHFZ34L)

• 175 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

D²PAK (TO-263)

I²PAK (TO-262)

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D²PAKis a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of

N-Channel MOSFET

its low internal connection resistance and can dissipate up

to 2 W in a typical surface mount application.

The through-hole version (IRFZ34L, SiHFZ34L) is available

for low-profile applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

IRFZ34SPbF

SiHFZ34S-E3

D²PAK (TO-263)

IRFZ34STRRPbF^a

SiHFZ34STRPbF^a

D²PAK (TO-263)

SiHFZ34STRL-GE3

IRFZ34STRLPbF^a

SiHFZ34STLPbF^a

I²PAK (TO-262)

IRFZ34LPbF

SiHFZ34L-E3

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

120

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^{a, e}

I_DM

Linear Derating Factor

0.59

200

3.7

W/°C

Single Pulse Avalanche Energy^{b, e}

E_AS

P_D

_C= 25 °C

Maximum Power Dissipation

V/ns

°C

T_A= 25 °C

Peak Diode Recovery dV/dt^{c, e}

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

dV/dt

T_J, T_stg

4.5

- 55 to + 175

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, Starting T_J= 25 °C, L = 260 μH, R_g= 25 , I_AS= 30 A (see fig. 12).

c. I_SD 30 A, dI/dt  200 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. Uses IRFZ34, SiHFZ34 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90368

S11-1045-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFZ34S_11相关器件

型号	品牌	获取价格	描述	数据表
IRFZ34SPBF	VISHAY	获取价格	Power MOSFET
IRFZ34STRL	VISHAY	获取价格	Power MOSFET
IRFZ34STRLPBF	VISHAY	获取价格	Power MOSFET
IRFZ34STRR	VISHAY	获取价格	Power MOSFET
IRFZ34STRRPBF	VISHAY	获取价格	Power MOSFET
IRFZ34V	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-220AB
IRFZ34VL	INFINEON	获取价格	Advanced Process Technology
IRFZ34VLPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ34VPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ34VS	INFINEON	获取价格	Advanced Process Technology

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