IRFZ34, SiHFZ34
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
60
Available
• 175 °C Operating Temperature
• Fast Switching
RDS(on) (Ω)
VGS = 10 V
0.050
RoHS*
Qg (Max.) (nC)
Qgs (nC)
46
11
COMPLIANT
• Ease of Paralleling
Q
gd (nC)
22
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220
IRFZ34PbF
SiHFZ34-E3
IRFZ34
Lead (Pb)-free
SnPb
SiHFZ34
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
20
T
C = 25 °C
30
21
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
A
Pulsed Drain Currenta
IDM
120
Linear Derating Factor
0.59
200
W/°C
mJ
Single Pulse Avalanche Energyb
Maximum Power Dissipation
EAS
PD
TC = 25 °C
88
W
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 175
300d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 259 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).
c. ISD ≤ 30 A, dI/dt ≤ 200 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
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