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IRFZ34PBF PDF预览

IRFZ34PBF

更新时间: 2024-11-21 12:46:27
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 4022K
描述
Power MOSFET

IRFZ34PBF 数据手册

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IRFZ34, SiHFZ34  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
60  
Available  
• 175 °C Operating Temperature  
• Fast Switching  
RDS(on) (Ω)  
VGS = 10 V  
0.050  
RoHS*  
Qg (Max.) (nC)  
Qgs (nC)  
46  
11  
COMPLIANT  
• Ease of Paralleling  
Q
gd (nC)  
22  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRFZ34PbF  
SiHFZ34-E3  
IRFZ34  
Lead (Pb)-free  
SnPb  
SiHFZ34  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
VDS  
60  
V
Gate-Source Voltage  
VGS  
20  
T
C = 25 °C  
30  
21  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
A
Pulsed Drain Currenta  
IDM  
120  
Linear Derating Factor  
0.59  
200  
W/°C  
mJ  
Single Pulse Avalanche Energyb  
Maximum Power Dissipation  
EAS  
PD  
TC = 25 °C  
88  
W
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
4.5  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 175  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 259 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).  
c. ISD 30 A, dI/dt 200 A/µs, VDD VDS, TJ 175 °C.  
d. 1.6 mm from case.  
www.kersemi.com  
1

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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB