IRFZ34NLPBF

更新时间： 2024-09-14 11:09:55

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	295K
描述
HEXFET Power MOSFET

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中文翻译

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数据手册

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IRFZ34NLPBF 数据手册

PD - 95571

IRFZ34NSPbF

IRFZ34NLPbF

l Advanced Process Technology

l SurfaceMount(IRFZ34NS)

l Low-profilethrough-hole(IRFZ34NL)

l 175°C Operating Temperature

l Fast Switching

HEXFET^®Power MOSFET

V_DSS= 55V

R_DS(on)= 0.040Ω

l Fully Avalanche Rated

l Lead-Free

I_D= 29A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

arewellknownfor, providesthedesignerwithanextremely

efficient and reliable device for use in a wide variety of

applications.

The D²Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D²Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ34NL) is available for low-

profileapplications.

TO-262

Pak

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10Vꢀ

Pulsed Drain Current ꢀ

100

3.8

P_D@T_A= 25°C

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

0.45

± 20

130

W/°C

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energyꢀ

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

Operating Junction and

5.6

5.0

V/ns

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

2.2

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB mount) **

www.irf.com

07/19/04

12 3 4 5 6 7...10

中文翻译

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与IRFZ34NLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFZ34NPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ34NS	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ34NSPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFZ34NSTRL	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 29A I(D) \| TO-263AB
IRFZ34NSTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34NSTRR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 29A I(D) \| TO-263AB
IRFZ34NSTRRPBF	INFINEON	获取价格	advanced process technology
IRFZ34PBF	INFINEON	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34PBF	KERSEMI	获取价格	Power MOSFET
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