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IRFZ34NSTRL PDF预览

IRFZ34NSTRL

更新时间: 2024-11-20 23:58:55
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页数 文件大小 规格书
10页 196K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-263AB

IRFZ34NSTRL 数据手册

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PD - 9.1311A  
IRFZ34NS/L  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Surface Mount (IRFZ34NS)  
l Low-profilethrough-hole(IRFZ34NL)  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 55V  
RDS(on) = 0.040Ω  
G
l Fully Avalanche Rated  
ID = 29A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETPowerMOSFETs  
arewellknownfor,providesthedesignerwithanextremely  
efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of  
its low internal connection resistance and can dissipate  
up to 2.0W in a typical surface mount application.  
Thethrough-holeversion(IRFZ34NL)isavailableforlow-  
profileapplications.  
2
D
Pa k  
T O -2 6 2  
Absolute Maximum Ratings  
Parameter  
Max.  
29  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
20  
A
100  
3.8  
68  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
W
W
Power Dissipation  
Linear Derating Factor  
0.45  
± 20  
130  
16  
W/°C  
V
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Avalanche Current  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
5.6  
5.0  
mJ  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
––––  
––––  
Max.  
2.2  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient (PCB mount) **  
40  
8/25/97  
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