PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRFZ34NS)
l Low-profilethrough-hole(IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.040Ω
G
l Fully Avalanche Rated
ID = 29A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
Thethrough-holeversion(IRFZ34NL)isavailableforlow-
profileapplications.
2
D
Pa k
T O -2 6 2
Absolute Maximum Ratings
Parameter
Max.
29
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
20
A
100
3.8
68
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
0.45
± 20
130
16
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
5.6
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
––––
––––
Max.
2.2
Units
RθJC
RθJA
°C/W
Junction-to-Ambient (PCB mount) **
40
8/25/97
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