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IRFZ34L PDF预览

IRFZ34L

更新时间: 2024-11-06 11:09:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 282K
描述
HEXFET Power MOSFET

IRFZ34L 数据手册

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PD - 9.892A  
IRFZ34S/L  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Surface Mount (IRFZ34S)  
l Low-profile through-hole (IRFZ34L)  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 60V  
RDS(on) = 0.050Ω  
G
ID = 30A  
S
Description  
Third Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETPowerMOSFETs  
arewellknownfor,providesthedesignerwithanextremely  
efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of  
its low internal connection resistance and can dissipate  
up to 2.0W in a typical surface mount application.  
The through-hole version (IRFZ34L) is available for low-  
profile applications.  
2
D
Pa k  
T O -2 6 2  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
21  
A
120  
3.7  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
W
W
Power Dissipation  
88  
Linear Derating Factor  
0.59  
± 20  
200  
4.5  
W/°C  
V
VGS  
EAS  
dv/dt  
TJ  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
°C  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
Typ.  
–––  
Max.  
1.7  
40  
Units  
RθJC  
RθJA  
°C/W  
–––  
8/25/97  

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