5秒后页面跳转
IRFZ34L PDF预览

IRFZ34L

更新时间: 2024-11-02 11:09:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 282K
描述
HEXFET Power MOSFET

IRFZ34L 数据手册

 浏览型号IRFZ34L的Datasheet PDF文件第2页浏览型号IRFZ34L的Datasheet PDF文件第3页浏览型号IRFZ34L的Datasheet PDF文件第4页浏览型号IRFZ34L的Datasheet PDF文件第5页浏览型号IRFZ34L的Datasheet PDF文件第6页浏览型号IRFZ34L的Datasheet PDF文件第7页 
PD - 9.892A  
IRFZ34S/L  
HEXFET® Power MOSFET  
l Advanced Process Technology  
l Surface Mount (IRFZ34S)  
l Low-profile through-hole (IRFZ34L)  
l 175°C Operating Temperature  
l Fast Switching  
D
VDSS = 60V  
RDS(on) = 0.050Ω  
G
ID = 30A  
S
Description  
Third Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedizeddevicedesignthatHEXFETPowerMOSFETs  
arewellknownfor,providesthedesignerwithanextremely  
efficient and reliable device for use in a wide variety of  
applications.  
The D2Pak is a surface mount power package capable of  
accommodating die sizes up to HEX-4. It provides the  
highest power capability and the lowest possible on-  
resistance in any existing surface mount package. The  
D2Pak is suitable for high current applications because of  
its low internal connection resistance and can dissipate  
up to 2.0W in a typical surface mount application.  
The through-hole version (IRFZ34L) is available for low-  
profile applications.  
2
D
Pa k  
T O -2 6 2  
Absolute Maximum Ratings  
Parameter  
Max.  
30  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10Vꢀ  
Continuous Drain Current, VGS @ 10Vꢀ  
Pulsed Drain Current ꢀ  
21  
A
120  
3.7  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation  
W
W
Power Dissipation  
88  
Linear Derating Factor  
0.59  
± 20  
200  
4.5  
W/°C  
V
VGS  
EAS  
dv/dt  
TJ  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚ꢀ  
Peak Diode Recovery dv/dt ƒꢀ  
Operating Junction and  
mJ  
V/ns  
-55 to + 175  
°C  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Junction-to-Ambient ( PCB Mounted,steady-state)**  
Typ.  
–––  
Max.  
1.7  
40  
Units  
RθJC  
RθJA  
°C/W  
–––  
8/25/97  

与IRFZ34L相关器件

型号 品牌 获取价格 描述 数据表
IRFZ34LPBF VISHAY

获取价格

Power MOSFET
IRFZ34N INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
IRFZ34NL INFINEON

获取价格

HEXFET? Power MOSFET
IRFZ34NLPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34NPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34NS INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34NSPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFZ34NSTRL ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-263AB
IRFZ34NSTRLPBF INFINEON

获取价格

Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
IRFZ34NSTRR ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-263AB