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IRF7413ZGPBF PDF预览

IRF7413ZGPBF

更新时间: 2024-11-20 20:04:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 286K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8

IRF7413ZGPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN AND LEAD FREE, SOP-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.09
其他特性:ULTRA LOW RESISTANCE雪崩能效等级(Eas):32 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF7413ZGPBF 数据手册

 浏览型号IRF7413ZGPBF的Datasheet PDF文件第2页浏览型号IRF7413ZGPBF的Datasheet PDF文件第3页浏览型号IRF7413ZGPBF的Datasheet PDF文件第4页浏览型号IRF7413ZGPBF的Datasheet PDF文件第5页浏览型号IRF7413ZGPBF的Datasheet PDF文件第6页浏览型号IRF7413ZGPBF的Datasheet PDF文件第7页 
PD - 96249  
IRF7413ZGPbF  
HEXFET® Power MOSFET  
Applications  
l Control FET for Notebook Processor  
VDSS  
30V  
RDS(on) max  
10m @VGS = 10V  
ID  
13A  
Power  
l Control and Synchronous Rectifier  
MOSFET for Graphics Cards and POL  
Converters in Computing, Networking  
and Telecommunication Systems  
A
A
D
1
8
S
2
3
4
7
S
S
D
6
D
Benefits  
5
l
l
l
Ultra-Low Gate Impedance  
Very Low RDS(on)  
Fully Characterized Avalanche Voltage and  
Current  
G
D
SO-8  
Top View  
l
l
l
100% Tested for RG  
Lead-Free  
Halogen-Free  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
V
VDS  
V
Gate-to-Source Voltage  
± 20  
13  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
10  
A
100  
2.5  
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
W
D
D
1.6  
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
Rθ  
Rθ  
JL  
–––  
50  
JA  
Notes  through „ are on page 10  
www.irf.com  
1
07/10/09  

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