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IRF6655TR1

更新时间： 2024-09-09 19:10:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 254K
描述
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

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IRF6655TR1 数据手册

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PD - 96926D  
IRF6655  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS compliant containing no lead or bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
53mΩ@ 10V  
Vgs(th)  
100V max ±20V max  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot  
Qgd  
l Optimized for High Frequency Switching   
8.7nC  
2.8nC  
3.9V  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Ideal for Control FET sockets in 36V – 75V in  
Synchronous Buck applications  
l Low Conduction Losses  
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
SH  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
SH  
MQ  
MX  
MT  
MN  
Description  
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-  
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by  
80%.  
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in  
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side  
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-  
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high  
performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
4.2  
3.4  
19  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
34  
DM  
EAS  
IAR  
11  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
5.0  
200  
180  
160  
140  
120  
100  
80  
12.0  
10.0  
8.0  
V
V
V
= 80V  
I = 5.0A  
D
I
= 5.0A  
DS  
DS  
DS  
D
= 50V  
= 20V  
T
= 125°C  
J
6.0  
4.0  
60  
40  
20  
0
2.0  
T
= 25°C  
12  
J
0.0  
4
6
8
10  
14  
16  
18  
0
2
4
6
8
10  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Typical On-Resistance Vs. Gate Voltage  
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET MOSFETs  
ƒ Repetitive rating; pulse width limited by max. junction temperature.  
„ Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.  
† Surface mounted on 1 in. square Cu board, steady state.  
‰ TC measured with thermocouple mounted to top (Drain) of part.  
www.irf.com  
1
11/16/05  
1234567...11

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IRF6655TR1 替代型号

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