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IRF6678

更新时间： 2024-10-31 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 254K
描述
DirectFET Power MOSFET

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IRF6678 数据手册

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PD - 96979B  
IRF6678  
DirectFET™ Power MOSFET ꢀ  
Typical values (unless otherwise specified)  
ꢂLow Profile (<0.7 mm)  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
1.7mΩ@ 10V 2.3mΩ@ 4.5V  
RDS(on)  
ꢂDual Sided Cooling Compatible ꢁ  
ꢂUltra Low Package Inductance  
ꢂOptimized for High Frequency Switching ꢁ  
ꢂIdeal for CPU Core DC-DC Converters  
Qg tot Qgd  
43nC  
Qgs2  
4.0nC  
Qrr  
46nC  
Qoss Vgs(th)  
15nC  
28nC  
1.8V  
ꢂOptimized for for SyncFET Socket of Sync. Buck Converterꢁ  
ꢂLow Conduction and Switching Losses  
ꢂCompatible with Existing Surface Mount Techniques ꢁ  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest  
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing  
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching  
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors  
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt  
bus converters including RDS(on) and gate charge to minimize losses in the SyncFET socket.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
30  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V ꢅ  
Continuous Drain Current, VGS @ 10V ꢅ  
Continuous Drain Current, VGS @ 10V ꢆ  
Pulsed Drain Current ꢃ  
I
I
I
I
@ TA = 25°C  
D
D
D
24  
@ TA = 70°C  
@ TC = 25°C  
A
150  
240  
210  
24  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy ꢄ  
Avalanche Current ꢃ  
mJ  
A
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 23A  
D
I
= 29A  
D
V
= 24V  
= 15V  
DS  
V
DS  
T
= 125°C  
J
T
3
= 25°C  
J
0
0
1
2
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Gate Voltage  
Notes:  
ꢁClick on this section to link to the appropriate technical paper.  
ꢀClick on this section to link to the DirectFET MOSFETs.  
ꢃRepetitive rating; pulse width limited by max. junction temperature.  
ꢄStarting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 23A.  
ꢅSurface mounted on 1 in. square Cu board, steady state.  
ꢆTC measured with thermocouple mounted to top (Drain) of part.  
www.irf.com  
1
04/18/05  
1234567...9

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IRF6678 替代型号

型号 品牌 替代类型 描述 数据表
IRF6678TR1 INFINEON

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