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IRF6706S2TR1PBF

更新时间： 2024-09-14 05:39:27
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 257K
描述
DirectFET Power MOSFET

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IRF6706S2TR1PBF 数据手册

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PD - 97485  
IRF6706S2TRPbF  
IRF6706S2TR1PbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
25V max ±20V max  
3.0mΩ@10V 5.2mΩ@4.5V  
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
13nC  
4.4nC 1.8nC  
21nC  
9.5nC  
1.8V  
D
D
S
G
DirectFET™ ISOMETRIC  
S1  
Applicable DirectFET Outline and Substrate Outline   
S2  
SB  
M2  
M4  
L4  
L6  
L8  
S1  
Description  
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6706S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6706S2TRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
17  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
13  
@ TA = 70°C  
@ TC = 25°C  
A
63  
130  
42  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
15  
10  
5
14.0  
12.0  
10.0  
8.0  
I
= 17A  
I = 13A  
D
D
V
V
= 20V  
DS  
DS  
= 13V  
T
= 125°C  
6.0  
J
4.0  
2.0  
T
= 25°C  
J
0
0.0  
0
2
4
6
8
10 12 14 16 18 20  
0
10  
20  
30  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 13A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
03/31/2010  
1234567...10

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IRF6706S2TR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6706S2TRPBF INFINEON

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