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IRF6711STRPBF

更新时间： 2024-09-15 01:03:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 308K
描述
DirectFETPower MOSFET

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中文翻译

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IRF6711STRPBF 数据手册

 浏览型号IRF6711STRPBF的Datasheet PDF文件第2页浏览型号IRF6711STRPBF的Datasheet PDF文件第3页浏览型号IRF6711STRPBF的Datasheet PDF文件第4页浏览型号IRF6711STRPBF的Datasheet PDF文件第5页浏览型号IRF6711STRPBF的Datasheet PDF文件第6页浏览型号IRF6711STRPBF的Datasheet PDF文件第7页 
PD - 96280  
IRF6711SPbF  
IRF6711STRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
VDSS  
25V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
3.0mΩ @ 10V 5.2mΩ @ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
13nC  
4.4nC 1.8nC  
21nC  
9.5nC  
1.8V  
DirectFET™ ISOMETRIC  
SQ  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6711STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6711STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6711STRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±20  
19  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
15  
@ TA = 70°C  
@ TC = 25°C  
A
84  
150  
62  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
15  
15  
10  
5
14.0  
12.0  
10.0  
8.0  
I = 15A  
D
I
= 15A  
D
V
= 20V  
= 13V  
DS  
V
DS  
6.0  
T = 125°C  
J
4.0  
2.0  
T = 25°C  
J
0
0.0  
2
4
6
8
10 12 14 16 18 20  
0
5
10  
G
15  
20  
25  
30  
35  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.54mH, RG = 25Ω, IAS = 15A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/11/09  
1234567...9

中文翻译

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