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IRF6716MPBF

更新时间： 2024-09-15 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
9页 638K
描述
DirectFET Power MOSFET

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IRF6716MPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N雪崩能效等级（Eas）：330 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (Abs) (ID)：180 A
最大漏极电流 (ID)：39 A最大漏源导通电阻：0.0016 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N3
JESD-609代码：e1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：78 W最大脉冲漏极电流 (IDM)：320 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：TIN SILVER COPPER
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6716MPBF 数据手册

 浏览型号IRF6716MPBF的Datasheet PDF文件第2页浏览型号IRF6716MPBF的Datasheet PDF文件第3页浏览型号IRF6716MPBF的Datasheet PDF文件第4页浏览型号IRF6716MPBF的Datasheet PDF文件第5页浏览型号IRF6716MPBF的Datasheet PDF文件第6页浏览型号IRF6716MPBF的Datasheet PDF文件第7页 
PD - 97274  
IRF6716MPbF  
IRF6716MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.6 mm)  
VDSS  
25V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
1.2mΩ@10V 2.0mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
39nC  
12nC  
5.3nC  
28nC  
27nC  
1.9V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck  
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt  
immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
39  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
31  
@ TA = 70°C  
@ TC = 25°C  
A
180  
320  
330  
32  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
6
5
4
3
2
1
0
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 32A  
D
I
= 40A  
V
V
= 20V  
D
DS  
DS  
= 13V  
T
= 125°C  
J
T
= 25°C  
4
J
2
3
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.65mH, RG = 25Ω, IAS = 32A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
02/20/07  
1234567...9

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IRF6716MPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6716MTRPBF INFINEON

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