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IRF6720S2TRPBF PDF预览

IRF6720S2TRPBF

更新时间： 2024-09-15 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 232K
描述
DirectFET TM Power MOSFET

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IRF6720S2TRPBF 数据手册

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PD - 97315  
IRF6720S2TRPbF  
IRF6720S2TR1PbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
30V max  
20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
7.9nC 2.8nC 0.9nC  
14nC  
5.1nC  
2.0V  
DirectFET™ ISOMETRIC  
S1  
Applicable DirectFET Outline and Substrate Outline   
S1  
S2  
SB  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-  
ating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
20  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
11  
I
I
I
I
@ TA = 25°C  
D
D
D
9.2  
35  
@ TA = 70°C  
@ TC = 25°C  
A
92  
DM  
EAS  
IAR  
12  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
8.8  
20  
16  
12  
8
12.0  
10.0  
8.0  
I = 8.8A  
I
= 11A  
D
D
V
V
= 24V  
DS  
DS  
= 15V  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
5
J
4
0.0  
0
10  
15  
20  
0
2
4
6
8
10 12 14 16 18 20  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.31mH, RG = 25Ω, IAS = 8.8A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
04/07/08  
1234567...10

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