5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率场效应晶体管> IRF6724MPBF
IRF6724MPBF PDF预览

IRF6724MPBF

更新时间： 2024-11-02 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 260K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

IRF6724MPBF 数据手册

 浏览型号IRF6724MPBF的Datasheet PDF文件第2页浏览型号IRF6724MPBF的Datasheet PDF文件第3页浏览型号IRF6724MPBF的Datasheet PDF文件第4页浏览型号IRF6724MPBF的Datasheet PDF文件第5页浏览型号IRF6724MPBF的Datasheet PDF文件第6页浏览型号IRF6724MPBF的Datasheet PDF文件第7页 
PD -97131A  
IRF6724MPbF  
IRF6724MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
1.9mΩ@ 10V 2.7mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
33nC  
10nC  
3.9nC  
34nC  
20nC  
1.8V  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6724MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6724MPbF has been optimized for parameters that are critical in synchronous buck  
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6724MPbF offers particularly low Rds(on) and high Cdv/dt  
immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Drain-to-Source Voltage  
Units  
V
VDS  
±20  
27  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
21  
A
@ TA = 70°C  
@ TC = 25°C  
150  
212  
12  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
21  
8
6
4
2
0
12  
10  
8
I = 21A  
D
V
= 24V  
I
= 27A  
DS  
VDS= 15V  
D
6
T
= 125°C  
= 25°C  
J
4
T
J
2
0
2.0  
4.0  
6.0  
8.0  
10.0  
0
20  
40  
60  
80  
100  
V
, Gate-to-Source Voltage (V)  
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance Vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.051mH, RG = 25Ω, IAS = 21A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
04/30/09  
1234567...9

中文翻译

下载PDF

与IRF6724MPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF6724MTRPBF INFINEON

获取价格

 		Power MOSFET
IRF6725MPBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6725MPBF_09 INFINEON

获取价格

 		DirectFETPower MOSFET
IRF6725MTR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRF6725MTRPBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6726MPBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6726MTR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, 32A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Silicon, Me
IRF6726MTRPBF INFINEON

获取价格

 		DirectFET Power MOSFET
IRF6727M INFINEON

获取价格

 		The StrongIRFET™ power MOSFET family is optim
IRF6727MPBF INFINEON

获取价格

 		DirectFET Power MOSFET

与IRF6724MPBF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证