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IRF6775M

更新时间： 2024-11-07 14:51:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 242K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRF6775M 数据手册

 浏览型号IRF6775M的Datasheet PDF文件第2页浏览型号IRF6775M的Datasheet PDF文件第3页浏览型号IRF6775M的Datasheet PDF文件第4页浏览型号IRF6775M的Datasheet PDF文件第5页浏览型号IRF6775M的Datasheet PDF文件第6页浏览型号IRF6775M的Datasheet PDF文件第7页 
DIGITALAUDIOMOSFET  
IRF6775MTRPbF  
Key Parameters  
Features  
VDS  
150  
V
• Latest MOSFET Silicon technology  
• Key parameters optimized for Class-D audio amplifier  
m
RDS(on) typ. @ VGS = 10V  
47  
25.0  
3.0  
applications  
• Low RDS(on) for improved efficiency  
• Low Qg for better THD and improved efficiency  
• Low Qrr for better THD and lower EMI  
Qg typ.  
RG(int) max.  
nC  
• Low package stray inductance for reduced ringing and lower EMI  
• Can deliver up to 250W per channel into 4Ω Load in  
Half-Bridge Configuration Amplifier  
• Dual sided cooling compatible  
· Compatible with existing surface mount technologies  
· RoHS compliant containing no lead or bromide  
·Lead-Free (Qualified up to 260°C Reflow)  
DirectFET™ ISOMETRIC  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)  
SQ  
SX  
ST  
SH  
MQ  
MX  
MT  
MN  
MZ  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the  
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse  
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as  
efficiency, THD, and EMI.  
The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic  
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI  
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The  
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-  
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for  
Class-D audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
150  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
± 20  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
I
I
I
I
@ TC = 25°C  
28  
4.9  
D
D
D
@ T = 25°C  
A
A
@ T = 70°C  
A
3.9  
39  
Pulsed Drain Current  
Maximum Power Dissipation  
Power Dissipation  
DM  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
89  
2.8  
1.8  
33  
W
D
D
D
Power Dissipation  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
5.6  
Linear Derating Factor  
0.022  
-40 to + 150  
W/°C  
°C  
T
J
Operating Junction and  
Storage Temperature Range  
T
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
RθJA  
°C/W  
RθJA  
Junction-to-Ambient  
–––  
–––  
1.4  
RθJA  
Junction-to-Ambient  
RθJC  
Junction-to-Case  
–––  
1.4  
RθJ-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through ‰ are on page 2  
www.irf.com © 2014 International Rectifier  
1
Submit Datasheet Feedback  
February 26, 2014  
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