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IRF6725MTR1PBF

更新时间： 2024-11-02 21:12:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 251K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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IRF6725MTR1PBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：8.53配置：Single
最大漏极电流 (Abs) (ID)：170 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：100 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

IRF6725MTR1PBF 数据手册

 浏览型号IRF6725MTR1PBF的Datasheet PDF文件第2页浏览型号IRF6725MTR1PBF的Datasheet PDF文件第3页浏览型号IRF6725MTR1PBF的Datasheet PDF文件第4页浏览型号IRF6725MTR1PBF的Datasheet PDF文件第5页浏览型号IRF6725MTR1PBF的Datasheet PDF文件第6页浏览型号IRF6725MTR1PBF的Datasheet PDF文件第7页 
PD - 96120A  
IRF6725MPbF  
IRF6725MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
1.7mΩ@ 10V 2.4mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
36nC  
11nC  
3.9nC  
39nC  
21nC  
1.8V  
l Optimized for both Sync.FET and some Control FET  
application  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6725MPbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
28  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
22  
@ TA = 70°C  
@ TC = 25°C  
A
170  
220  
190  
22  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
6
5
4
3
2
1
0
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I
= 28A  
I = 22A  
D
D
V
= 24V  
= 15V  
DS  
V
DS  
T
= 125°C  
J
T
= 25°C  
5
J
0
10  
15  
20  
0
5
10  
15  
20  
25  
30  
35  
40  
Q , Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 22A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
04/30/09  
1234567...9

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IRF6725MTR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6725MTRPBF INFINEON

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