5秒后页面跳转
捷配首页

Datasheet > IRF6785MPBF
IRF6785MPBF PDF预览

IRF6785MPBF

更新时间： 2024-11-19 01:11:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 609K
描述
Latest MOSFET Silicon technology

阅读下载

中文翻译

获取价格

IRF6785MPBF 数据手册

 浏览型号IRF6785MPBF的Datasheet PDF文件第2页浏览型号IRF6785MPBF的Datasheet PDF文件第3页浏览型号IRF6785MPBF的Datasheet PDF文件第4页浏览型号IRF6785MPBF的Datasheet PDF文件第5页浏览型号IRF6785MPBF的Datasheet PDF文件第6页浏览型号IRF6785MPBF的Datasheet PDF文件第7页 
PD - 97282  
DIGITAL AUDIO MOSFET  
IRF6785MTRPbF  
Key Parameters  
Features  
• Latest MOSFET Silicon technology  
VDS  
200  
V
• Key parameters optimized for Class-D audio amplifier  
applications  
• Low RDS(on) for improved efficiency  
m:  
nC  
RDS(on) typ. @ VGS = 10V  
Qg typ.  
85  
26  
• Low Qg for better THD and improved efficiency  
• Low Qrr for better THD and lower EMI  
• Low package stray inductance for reduced ringing and lower  
EMI  
RG(int) max  
3.0  
• Can deliver up to 250W per channel into 8Ω Load in  
Half-Bridge Configuration Amplifier  
• Dual sided cooling compatible  
· Compatible with existing surface mount technologies  
· RoHS compliant containing no lead or bromide  
·Lead-Free (Qualified up to 260°C Reflow)  
DirectFET™ ISOMETRIC  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)  
SQ SX ST SH MQ MX MT  
MN  
MZ  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the  
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse  
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as  
efficiency, THD, and EMI.  
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic  
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI  
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The  
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-  
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for  
Class-D audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
200  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
± 20  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
@ TC = 25°C  
@ T = 25°C  
A
19  
3.4  
D
D
A
I
I
@ T = 70°C  
A
2.7  
27  
D
DM  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
Maximum Power Dissipation  
Power Dissipation  
57  
2.8  
1.8  
33  
W
D
D
D
Power Dissipation  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
8.4  
Linear Derating Factor  
Operating Junction and  
0.022  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Typ.  
Max.  
Units  
Rθ  
JA  
–––  
12.5  
20  
45  
°C/W  
Rθ  
JA  
Junction-to-Ambient  
–––  
–––  
1.4  
Rθ  
JA  
Junction-to-Ambient  
Rθ  
JC  
Junction-to-Case  
–––  
1.4  
Rθ  
J-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through Š are on page 2  
www.irf.com  
1
04/18/07  
1234567...9

中文翻译

下载PDF

与IRF6785MPBF相关器件

型号 品牌 获取价格 描述 数据表
IRF6785MPBF_15 INFINEON

获取价格

 		Latest MOSFET Silicon technology
IRF6785MTRPBF INFINEON

获取价格

 		DIGITAL AUDIO MOSFET
IRF6794MPBF INFINEON

获取价格

 		HEXFET Power MOSFET plus Schottky Diode
IRF6794MTR1PBF INFINEON

获取价格

 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6794MTRPBF INFINEON

获取价格

 		HEXFET Power MOSFET plus Schottky Diode
IRF6795MPBF INFINEON

获取价格

 		HEXFET Power MOSFET plus Schottky Diode
IRF6795MPBF_10 INFINEON

获取价格

 		HEXFET Power MOSFET plus Schottky Diode
IRF6795MTRPBF INFINEON

获取价格

 		HEXFET Power MOSFET plus Schottky Diode
IRF6797MPBF INFINEON

获取价格

 		HEXFET Power MOSFET plus Schottky Diode
IRF6797MPBF_15 INFINEON

获取价格

 		RoHs Compliant Containing No Lead and Bromide

与IRF6785MPBF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证