PD-97634
IRF6811SPbF
IRF6811STRPbF
DirectFET®plus Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
VDSS
25V max ±16V max
VGS
RDS(on)
RDS(on)
2.8mΩ @ 10V 4.1mΩ @ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC
4.2nC
1.4nC
23nC
11nC
1.6V
l Footprint compatible to DirectFET
G
D
D
S
ISOMETRIC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Max.
25
Parameter
Units
VDS
Drain-to-Source Voltage
V
±16
19
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
15
@ TA = 70°C
@ TC = 25°C
A
74
150
32
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
15
12
10
8
14.0
12.0
10.0
8.0
I
= 19A
I = 15A
D
D
V
V
V
= 20V
DS
DS
DS
= 13V
= 5.0V
6
T = 125°C
J
6.0
4
4.0
2
T
= 25°C
2.0
J
0
0.0
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0
5
10
15
20
25
30
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.28mH, RG = 50Ω, IAS = 15A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
01/28/11