Datasheet > IRF6N60

IRF6N60

更新时间： 2024-11-18 05:39:27

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IRF6N60 数据手册

IRF6N60

POWER MOSFET

GENERAL DESCRIPTION

FEATURES

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

'ꢀ Robust High Voltage Termination

'ꢀ Avalanche Energy Specified

'ꢀ Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

'ꢀ Diode is Characterized for Use in Bridge Circuits

'ꢀ I_DSSSpecified at Elevated Temperature

PIN CONFIGURATION

SYMBOL

TO-220/TO-220FP

Front View

N-Channel MOSFET

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型号	品牌	获取价格	描述	数据表
IRF6N60FP	SUNTAC	获取价格	POWER MOSFET
IRF710	FAIRCHILD	获取价格	N-Channel Power MOSFETs, 2.25A, 350-400V
IRF710	SAMSUNG	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal
IRF710	ROCHESTER	获取价格	2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF710	TI	获取价格	IRF710
IRF710	VISHAY	获取价格	Power MOSFET
IRF710	INTERSIL	获取价格	2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET
IRF710	NJSEMI	获取价格	Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB
IRF710-005	VISHAY	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal
IRF710-012PBF	VISHAY	获取价格	Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal