IRF7103QPBF

更新时间： 2024-09-16 02:59:59

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关脉冲光电二极管局域网
页数	文件大小	规格书
10页	264K
描述
AUTOMOTIVE MOSFET HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRF7103QPBF 数据手册

PD - 96101

IRF7103QPbF

AUTOMOTIVE MOSFET

Typical Applications

HEXFET^®Power MOSFET

Anti-lock Braking Systems (ABS)

Electronic Fuel Injection

Power Doors, Windows & Seats

V_DSS

50V

R_DS(on)max (mW)

130@V_GS= 10V

I_D

3.0A

Benefits

Advanced Process Technology

200@V_GS= 4.5V

1.5A

Dual N-Channel MOSFET

Ultra Low On-Resistance

175°C Operating Temperature

Repetitive Avalanche Allowed up to Tjmax

Automotive [Q101] Qualified

Lead-Free

Description

Specifically designed for Automotive applications, these

HEXFET^®Power MOSFET's in a Dual SO-8 package utilize

the lastest processing techniques to achieve extremely low

on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET's are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits combine

to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other

applications.

SO-8

Top View

The efficient SO-8 package provides enhanced thermal

characteristics and dual MOSFET die capability making it ideal

in a variety of power applications. This dual, surface mount

SO-8candramaticallyreduceboardspaceandisalsoavailable

in Tape & Reel.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current

3.0

2.5

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

2.4

mW/°C

V_GS

Gate-to-Source Voltage

± 20

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

See Fig.16c, 16d, 19, 20

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ꢀ

dv/dt

T_J,T_STG

V/ns

°C

Junction and Storage Temperature Range

-55 to + 175

Thermal Resistance

Symbol

R_θJL

Parameter

Junction-to-Drain Lead

Typ.

–––

Max.

Units

R_θJA

Junction-to-Ambient

–––

°C/W

www.irf.com

07/23/07

12 3 4 5 6 7...10

中文翻译

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