型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF710 | FAIRCHILD |
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N-Channel Power MOSFETs, 2.25A, 350-400V | |
IRF710 | SAMSUNG |
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Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF710 | ROCHESTER |
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2A, 400V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF710 | TI |
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IRF710 | |
IRF710 | VISHAY |
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Power MOSFET | |
IRF710 | INTERSIL |
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2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET | |
IRF710 | NJSEMI |
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Trans MOSFET N-CH 400V 2A 3-Pin(3+Tab) TO-220AB | |
IRF710-005 | VISHAY |
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Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF710-012PBF | VISHAY |
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Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF7101 | INFINEON |
获取价格 |
HEXFET Power MOSFET |