Datasheet > IRF7103TR

IRF7103TR

更新时间： 2024-05-23 22:22:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	406K
描述
种类:N+N-Channel;漏源电压（Vdss）:50V;持续漏极电流（Id）（在25°C时）:3A;Vgs(th)(V):±20;漏源导通电阻:13mΩ@10V

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IRF7103TR 数据手册

UMW

IRF7103

Channel MOSFET

Dual N

Features

VDS (V)=50V

30m (VGS = 10V)

40 m (VGS = 4.5V)

RDS(ON)

Adavanced Process Technology

Ultra Low On-Resistance

Surface Mount

Dynamic dv/dt Rating

Fast Switching

Lead-Free

Top View

Description

The SOP-8 has been modified through a

customized leadframe for enhanced thermal

characteristics and dual-die capability making

it ideal in a variety of power applications.With

these improvements, multiple devices can be

used in an application with dramatically

reduced board space. The package is

designed for vapor phase, infra red. or wave

soldering technigues Power dissipation of

greater than 0.8W is possible in a typical pcB

mount application.

Absolute Maximum Ratings

Parameter

Max.

3.0

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

2.3

P_D@T_A= 25°C

Power Dissipation

2.0

W/°C

Linear Derating Factor

0.016

± 20

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

4.5

V/nS

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

62.5

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

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