Datasheet > IRF710

IRF710

更新时间： 2024-09-14 22:24:11

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	59K
描述
2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET

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IRF710 数据手册

IRF710

Data Sheet

June 1999

File Number 2310.3

2.0A, 400V, 3.600 Ohm, N-Channel Power

MOSFET

Features

• 2.0A, 400V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

They can be operated directly from integrated circuits.

• r

= 3.600Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

Formerly developmental type TA17444.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF710

TO-220AB

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-220AB

TOP VIEW

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-220

12 3 4 5 6 7

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IRF710 替代型号

型号	品牌	替代类型	描述	数据表
ZVN4424GTA	DIODES	功能相似	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
STD5N20LT4	STMICROELECTRONICS	功能相似	N-CHANNEL 200V - 0.65ヘ - 5A DPAK STripFET⑩ MO

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