IRF7103UTRPBF

更新时间： 2024-10-30 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关光电二极管
页数	文件大小	规格书
9页	171K
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中文翻译

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数据手册

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IRF7103UTRPBF 数据手册

PD - 9.1095B

IRF7103

HEXFET^®Power MOSFET

l Adavanced Process Technology

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 50V

G 1

D 1

R_DS(on)= 0.130Ω

D 2

G 2

I_D= 3.0A

Top View

Description

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.0

2.3

P_D@T_C= 25°C

Power Dissipation

2.0

W/°C

Linear Derating Factor

0.016

± 20

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

4.5

V/nS

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

62.5

°C/W

8/25/97

12 3 4 5 6 7...9

中文翻译

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