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IRF6898MPBF

更新时间： 2024-11-22 01:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 249K
描述
HEXFET Power MOSFET plus Schottky Diode

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中文翻译

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IRF6898MPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
雪崩能效等级（Eas）：473 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (Abs) (ID)：213 A最大漏极电流 (ID)：35 A
最大漏源导通电阻：0.0011 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：78 W最大脉冲漏极电流 (IDM)：280 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6898MPBF 数据手册

 浏览型号IRF6898MPBF的Datasheet PDF文件第2页浏览型号IRF6898MPBF的Datasheet PDF文件第3页浏览型号IRF6898MPBF的Datasheet PDF文件第4页浏览型号IRF6898MPBF的Datasheet PDF文件第5页浏览型号IRF6898MPBF的Datasheet PDF文件第6页浏览型号IRF6898MPBF的Datasheet PDF文件第7页 
IRF6898MPbF  
IRF6898MTRPbF  
HEXFET® Power MOSFET plus Schottky Diode ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide ‚  
l Integrated Monolithic Schottky Diode  
l Low Profile (<0.7 mm)  
lDual Sided Cooling Compatible   
l Low Package Inductance  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±16V max  
0.8mΩ@ 10V 1.2mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching  
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
41nC  
15nC 4.7nC 66nC 43nC  
1.6V  
S
G
D
D
S
DirectFET™ ISOMETRIC  
MX  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MX  
Description  
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6898MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both  
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing  
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters  
that power high current loads such as the latest generation of microprocessors. The IRF6898MPbF has been optimized for parameters that  
are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±16  
35  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
28  
A
@ TA = 70°C  
@ TC = 25°C  
213  
280  
473  
28  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
3.0  
2.0  
1.0  
0.0  
14  
12  
10  
8
I = 28A  
D
V
V
= 20V  
I
= 35A  
DS  
D
= 13V  
DS  
T
= 125°C  
J
6
4
2
T
= 25°C  
J
0
2
4
6
8
10  
12  
14  
16  
0
20  
40  
60  
80  
100  
120  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
G
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„TC measured with thermocouple mounted to top (Drain) of part.  
ꢀRepetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.21mH, RG = 50Ω, IAS = 28A.  
Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒSurface mounted on 1 in. square Cu board, steady state.  
1
www.irf.com  
© 2013 International Rectifier  
March 21, 2013  
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IRF6898MPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6898MTRPBF INFINEON

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