Datasheet > IRF6N40

IRF6N40

更新时间： 2024-11-18 11:09:23

品牌	Logo	应用领域
SUNTAC		/
页数	文件大小	规格书
3页	70K
描述
POWER MOSFET

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中文翻译

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数据手册

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IRF6N40 数据手册

IRF6N40

P^OWERMOSFET

GENERAL DESCRIPTION

FEATURES

This Power MOSFET is designed for low voltage, high

speed power switching applications such as switching

regulators, conveters, solenoid and relay drivers.

ꢀ Higher Current Rating

ꢀ Lower r_DS(ON), Lower Capacitances

ꢀ Lower Total Gate Charge

ꢀ Tighter VSD Specifications

ꢀ Avalanche Energy Specified

PIN CONFIGURATION

SYMBOL

TO-220

Top View

N-Channel MOSFET

ORDERING INFORMATION

Part Number

Package

IRF6N40................................................TO-220

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current Ё Continuous

Symbol

I_D

Value

Unit

6.0

Ё Pulsed (Note 1)

I_DM

Gate-to-Source Voltage Ё Continue

Total Power Dissipation

V_GS

P_D

Derate above 25к

0.77

180

W/к

Single Pulse Drain-to-Source Avalanche Energy Ё T_J= 25к

(V_DD= 100V, V_GS= 10V, I_L= 6A, L = 10mH, R_G= 25ȍ)

Operating and Storage Temperature Range

Thermal Resistance Ё Junction to Case

Ё Junction to Ambient

E_AS

T_J, T_STG

ș_JC

ș_JA

T_L

-55 to 150

1.70

к/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

300

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