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IRF6893MTRPBF

更新时间： 2024-09-16 19:56:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 224K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IRF6893MTRPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
配置：Single最大漏极电流 (Abs) (ID)：29 A
FET 技术：METAL-OXIDE SEMICONDUCTOR湿度敏感等级：1
最高工作温度：150 °C峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：69 W
子类别：FET General Purpose Power表面贴装：YES
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

IRF6893MTRPBF 数据手册

 浏览型号IRF6893MTRPBF的Datasheet PDF文件第2页浏览型号IRF6893MTRPBF的Datasheet PDF文件第3页浏览型号IRF6893MTRPBF的Datasheet PDF文件第4页浏览型号IRF6893MTRPBF的Datasheet PDF文件第5页浏览型号IRF6893MTRPBF的Datasheet PDF文件第6页浏览型号IRF6893MTRPBF的Datasheet PDF文件第7页 
PD - 97761  
IRF6893MPbF  
IRF6893MTRPbF  
DirectFET®plus MOSFET with Schottky Diode ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Integrated Monolithic Schottky Diode  
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±16V max 1.2m@ 10V 1.6m@ 4.5V  
l Dual Sided Cooling Compatible   
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Low Package Inductance  
25nC  
8.5nC  
2.5nC  
36nC  
29nC  
1.6V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
ISOMETRIC  
MX  
MP  
l Footprint compatible to DirectFET™  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MX  
Description  
The IRF6893MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6893MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both  
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing  
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters  
that power high current loads such as the latest generation of microprocessors. The IRF6893MPbF has been optimized for parameters that  
are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
V
±16  
29  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
23  
A
@ TA = 70°C  
@ TC = 25°C  
168  
230  
370  
23  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
5
4
3
2
1
0
14.0  
12.0  
10.0  
8.0  
I = 23A  
D
I
= 29A  
D
V
V
V
= 20V  
DS  
= 13V  
DS  
DS  
= 5.0V  
T
8
= 125°C  
J
6.0  
4.0  
T
= 25°C  
6
2.0  
J
0.0  
0
2
4
10  
12  
14  
16  
0
10  
20  
G
30  
40  
50  
60  
70  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.4mH, RG = 50, IAS = 23A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
02/22/12  
1234567...9

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IRF6893MTRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6893MTR1PBF INFINEON

完全替代

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6893MPBF INFINEON

功能相似

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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