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IRF6892STR1PBF

更新时间： 2024-11-06 21:17:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 245K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IRF6892STR1PBF 数据手册

 浏览型号IRF6892STR1PBF的Datasheet PDF文件第2页浏览型号IRF6892STR1PBF的Datasheet PDF文件第3页浏览型号IRF6892STR1PBF的Datasheet PDF文件第4页浏览型号IRF6892STR1PBF的Datasheet PDF文件第5页浏览型号IRF6892STR1PBF的Datasheet PDF文件第6页浏览型号IRF6892STR1PBF的Datasheet PDF文件第7页 
PD - 97770  
IRF6892STRPbF  
IRF6892STR1PbF  
DirectFET®plus MOSFET with Schottky Diode ‚  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±16V max  
1.3mΩ @ 10V 2.0mΩ @ 4.5V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
17nC  
6.0nC 2.3nC  
39nC  
16nC  
1.8V  
G
S
S
D
D
S
ISOMETRIC  
S3C  
Applicable DirectFET Outline and Substrate Outline   
S1  
S2  
S3C  
M2  
M4  
L4  
L6  
L8  
Description  
The IRF6892SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package  
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6892SPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both  
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing  
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters  
that power high current loads such as the latest generation of microprocessors. The IRF6892SPbF has been optimized for parameters that  
are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±16  
28  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
22  
@ TA = 70°C  
@ TC = 25°C  
A
125  
220  
240  
22  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
8.0  
6.0  
4.0  
2.0  
0.0  
14.0  
12.0  
10.0  
8.0  
I
= 28A  
I = 22A  
D
D
V
V
= 20V  
= 13V  
DS  
DS  
VDS= 5V  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
J
0.0  
2
4
6
8
10  
12  
14  
16  
0
10  
20  
30  
40  
50  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
G
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 22A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
4/4/12  
1234567...9

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IRF6892STR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6892STRPBF INFINEON

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