PD-96393
IRF6810STRPbF
IRF6810STR1PbF
DirectFET®plus Power MOSFET
l RoHS Compliant and Halogen Free
l Low Profile (<0.7 mm)
Typical values (unless otherwise specified)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
VDSS
25V max ±16V max
VGS
RDS(on)
RDS(on)
4.0mΩ @ 10V 5.6mΩ @ 4.5V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Application
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
7.4nC 2.7nC 0.98nC 12nC
8.9nC
1.6V
l Footprint compatible to DirectFET
S
D
D
G
DirectFET®plusISOMETRIC
S1
Applicable DirectFET Outline and Substrate Outline
S2
SB
M2
M4
L4
L6
L8
S1
Description
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck
operating from 12 volt bus converters.
Absolute Maximum Ratings
Max.
25
Parameter
Units
VDS
Drain-to-Source Voltage
V
±16
16
Gate-to-Source Voltage
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
13
@ TA = 70°C
@ TC = 25°C
A
50
130
51
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
13
15
10
5
14.0
12.0
10.0
8.0
I = 13A
I
= 16A
D
D
V
V
= 20V
DS
DS
= 13V
VDS= 5V
T = 125°C
J
6.0
4.0
T
= 25°C
J
2.0
0
0.0
0
2
4
6
8
10
12
14
16
0
5
10
15
20
Q
Total Gate Charge (nC)
V
Gate -to -Source Voltage (V)
G
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.601mH, RG = 50Ω, IAS = 13A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
08/08/11