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IRF6811SPBF

更新时间： 2024-11-18 12:30:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 259K
描述
RoHS Compliant and Halogen Free

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IRF6811SPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
Is Samacsys：N雪崩能效等级（Eas）：32 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (Abs) (ID)：74 A
最大漏极电流 (ID)：19 A最大漏源导通电阻：0.0037 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：32 W
最大脉冲漏极电流 (IDM)：150 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6811SPBF 数据手册

 浏览型号IRF6811SPBF的Datasheet PDF文件第2页浏览型号IRF6811SPBF的Datasheet PDF文件第3页浏览型号IRF6811SPBF的Datasheet PDF文件第4页浏览型号IRF6811SPBF的Datasheet PDF文件第5页浏览型号IRF6811SPBF的Datasheet PDF文件第6页浏览型号IRF6811SPBF的Datasheet PDF文件第7页 
PD-97634  
IRF6811SPbF  
IRF6811STRPbF  
DirectFET®plus Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
VDSS  
25V max ±16V max  
VGS  
RDS(on)  
RDS(on)  
2.8mΩ @ 10V 4.1mΩ @ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
11nC  
4.2nC  
1.4nC  
23nC  
11nC  
1.6V  
l Footprint compatible to DirectFET  
G
D
D
S
ISOMETRIC  
SQ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6811STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve  
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-  
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±16  
19  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
15  
@ TA = 70°C  
@ TC = 25°C  
A
74  
150  
32  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
15  
12  
10  
8
14.0  
12.0  
10.0  
8.0  
I
= 19A  
I = 15A  
D
D
V
V
V
= 20V  
DS  
DS  
DS  
= 13V  
= 5.0V  
6
T = 125°C  
J
6.0  
4
4.0  
2
T
= 25°C  
2.0  
J
0
0.0  
0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16  
0
5
10  
15  
20  
25  
30  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.28mH, RG = 50Ω, IAS = 15A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
01/28/11  
1234567...9

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