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IRF6798MTRPBF

更新时间： 2024-11-18 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管
页数 文件大小 规格书
9页 249K
描述
HEXFET Power MOSFET plus Schottky Diode

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中文翻译

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IRF6798MTRPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.19
雪崩能效等级（Eas）：220 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (Abs) (ID)：197 A最大漏极电流 (ID)：37 A
最大漏源导通电阻：0.0013 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3湿度敏感等级：1
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：78 W
最大脉冲漏极电流 (IDM)：300 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6798MTRPBF 数据手册

 浏览型号IRF6798MTRPBF的Datasheet PDF文件第2页浏览型号IRF6798MTRPBF的Datasheet PDF文件第3页浏览型号IRF6798MTRPBF的Datasheet PDF文件第4页浏览型号IRF6798MTRPBF的Datasheet PDF文件第5页浏览型号IRF6798MTRPBF的Datasheet PDF文件第6页浏览型号IRF6798MTRPBF的Datasheet PDF文件第7页 
PD - 97433B  
IRF6798MPbF  
IRF6798MTRPbF  
HEXFET® Power MOSFET plus Schottky Diode ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Integrated Monolithic Schottky Diode  
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±20V max  
0.95mΩ@ 10V 1.6mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Dual Sided Cooling Compatible   
l Low Package Inductance  
50nC  
16nC  
6.8nC  
64nC  
38nC  
1.8V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6798MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both  
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing  
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters  
that power high current loads such as the latest generation of microprocessors. The IRF6798MPbF has been optimized for parameters that  
are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
37  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
30  
@ TA = 70°C  
@ TC = 25°C  
A
197  
300  
220  
30  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
5
4
3
2
1
0
14.0  
12.0  
10.0  
8.0  
I
= 37A  
I = 30A  
D
D
V
V
= 20V  
DS  
= 13V  
DS  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
J
0.0  
2
4
6
8
10 12 14 16 18 20  
0
25  
50  
75  
100  
125  
150  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
G
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 30A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
12/10/09  
1234567...9

中文翻译

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IRF6798MTRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6798MTR1PBF INFINEON

类似代替

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6898MTRPBF INFINEON

功能相似

 Power Field-Effect Transistor, 35A I(D), 25V, 0.0011ohm, 1-Element, N-Channel, Silicon, Me
IRF6798MPBF INFINEON

功能相似

 HEXFET Power MOSFET plus Schottky Diode

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