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IRF6798MTR1PBF

更新时间： 2024-11-02 20:07:55
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 244K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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IRF6798MTR1PBF 数据手册

 浏览型号IRF6798MTR1PBF的Datasheet PDF文件第2页浏览型号IRF6798MTR1PBF的Datasheet PDF文件第3页浏览型号IRF6798MTR1PBF的Datasheet PDF文件第4页浏览型号IRF6798MTR1PBF的Datasheet PDF文件第5页浏览型号IRF6798MTR1PBF的Datasheet PDF文件第6页浏览型号IRF6798MTR1PBF的Datasheet PDF文件第7页 
PD - 97433B  
IRF6798MPbF  
IRF6798MTRPbF  
HEXFET® Power MOSFET plus Schottky Diode ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Integrated Monolithic Schottky Diode  
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±20V max  
0.95mΩ@ 10V 1.6mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Dual Sided Cooling Compatible   
l Low Package Inductance  
50nC  
16nC  
6.8nC  
64nC  
38nC  
1.8V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF6798MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6798MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both  
conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing  
the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters  
that power high current loads such as the latest generation of microprocessors. The IRF6798MPbF has been optimized for parameters that  
are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
37  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
30  
@ TA = 70°C  
@ TC = 25°C  
A
197  
300  
220  
30  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
5
4
3
2
1
0
14.0  
12.0  
10.0  
8.0  
I
= 37A  
I = 30A  
D
D
V
V
= 20V  
DS  
= 13V  
DS  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
J
0.0  
2
4
6
8
10 12 14 16 18 20  
0
25  
50  
75  
100  
125  
150  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
G
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.50mH, RG = 25Ω, IAS = 30A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
12/10/09  
1234567...9

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IRF6798MTR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6798MTRPBF INFINEON

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 HEXFET Power MOSFET plus Schottky Diode

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