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IRF6810SPBF

更新时间： 2024-11-19 01:03:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 283K
描述
DirectFET®Power MOSFET

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IRF6810SPBF 数据手册

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PD-96393  
IRF6810STRPbF  
IRF6810STR1PbF  
DirectFET®plus Power MOSFET ‚  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
Typical values (unless otherwise specified)  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
VDSS  
25V max ±16V max  
VGS  
RDS(on)  
RDS(on)  
4.0mΩ @ 10V 5.6mΩ @ 4.5V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
7.4nC 2.7nC 0.98nC 12nC  
8.9nC  
1.6V  
l Footprint compatible to DirectFET  
S
D
D
G
DirectFET®plusISOMETRIC  
S1  
Applicable DirectFET Outline and Substrate Outline   
S2  
SB  
M2  
M4  
L4  
L6  
L8  
S1  
Description  
The IRF6810STRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET  
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
VDS  
Drain-to-Source Voltage  
V
±16  
16  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
13  
@ TA = 70°C  
@ TC = 25°C  
A
50  
130  
51  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
15  
10  
5
14.0  
12.0  
10.0  
8.0  
I = 13A  
I
= 16A  
D
D
V
V
= 20V  
DS  
DS  
= 13V  
VDS= 5V  
T = 125°C  
J
6.0  
4.0  
T
= 25°C  
J
2.0  
0
0.0  
0
2
4
6
8
10  
12  
14  
16  
0
5
10  
15  
20  
Q
Total Gate Charge (nC)  
V
Gate -to -Source Voltage (V)  
G
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.601mH, RG = 50Ω, IAS = 13A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
08/08/11  
1234567...9

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